Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: The Open Radio Access Network (O-RAN), manifested through the specifications established by the O-RAN Alliance, stands ready to transform the telecommunications ecosystem. In particular, the ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback